Size reduction of the Ge islands by utilizing the strain fields from the lower-temperature-grown hut-clusters buried in the Si matrix

Autor: Takamiya, H, Miura, M *, Mitsui, J, Koh, S, Hattori, T, Shiraki, Y
Zdroj: In Materials Science & Engineering B 2002 89(1):58-61
Databáze: ScienceDirect