Microstructure of GaN nucleation layer during initial stage MOCVD growth
| Autor: | Kim, C.C., Je, J.H. *, Yi, M.S., Noh, D.Y., Degave, F., Ruterana, Pierre |
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| Zdroj: | In Materials Science & Engineering B 2001 82(1):108-110 |
| Databáze: | ScienceDirect |
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