Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiation
| Autor: | Goodman, S.A *, Auret, F.D, Myburg, G, Legodi, M.J, Gibart, P, Beaumont, B |
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| Zdroj: | In Materials Science & Engineering B 2001 82(1):95-97 |
| Databáze: | ScienceDirect |
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