Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications
| Autor: | Neyret, E. *, Di Cioccio, L., Bluet, J.M., Pernot, J., Vicente, P., Anglos, D., Lagadas, M., Billon, T. |
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| Zdroj: | In Materials Science & Engineering B 2001 80(1):332-336 |
| Databáze: | ScienceDirect |
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