Luminescence and lasing in GaN epitaxial layers and InGaN/GaN quantum well heterostructures under optical and electron-beam excitation
| Autor: | Yablonskii, G.P. *, Lutsenko, E.V., Pavlovskii, V.N., Marko, I.P., Schineller, B., Heuken, M., Heime, K. |
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| Zdroj: | In Materials Science & Engineering B 2001 80(1):322-326 |
| Databáze: | ScienceDirect |
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