Uniformity control of 3 inch GaN/InGaN layers grown in Planetary Reactors®
| Autor: | Beccard, R., Protzmann, H., Luenenbuerger, M., Schineller, B., Heuken, M. * |
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| Zdroj: | In Materials Science & Engineering B 2001 80(1):50-53 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect