Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
| Autor: | Savkina, N.S., Lebedev, A.A., Davydov, D.V., Strel'chuk, A.M., Tregubova, A.S., Raynaud, C. *, Chante, J.-P., Locatelli, M.-L., Planson, D., Milan, J., Godignon, P., Campos, F.J., Mestres, N., Pascual, J., Brezeanu, G., Badila, M. |
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| Zdroj: | In Materials Science & Engineering B 2000 77(1):50-54 |
| Databáze: | ScienceDirect |
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