Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0 0 0 1) sapphire
| Autor: | Dassonneville, S, Amokrane, A, Sieber, B *, Farvacque, J.-L, Beaumont, B, Bousquet, V, Gibart, P, Leifer, K, Ganiere, J.-D |
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| Zdroj: | In Physica B: Physics of Condensed Matter 15 December 1999 273-274:148-151 |
| Databáze: | ScienceDirect |
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