Theory of channel hot-carrier degradation in MOSFETs
| Autor: | Hess, K *, Register, L.F, McMahon, W, Tuttle, B, Aktas, O, Ravaioli, U, Lyding, J.W, Kizilyalli, I.C |
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| Zdroj: | In Physica B: Physics of Condensed Matter 1999 272(1):527-531 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect