Deep traps and persistent photocapacitance in p-SnO2/i-ZrxSn1-xO2/n-SnO2 p-i-n diodes

Autor: Li, Mingkai, Polyakov, A.Y., Li, Qiang, Vasilev, A.A., Romanov, A.A., Matros, N.R., Alexanyan, L.A., Zhang, Qi, Lai, Degang, Zhang, Baoxia, Lu, Yinmei, Liang, Shiheng, Liu, Chuansheng, He, Yunbin
Zdroj: In Physica B: Condensed Matter 15 February 2025 699
Databáze: ScienceDirect