Tunable band gaps and high carrier mobilities in germanene by Si doping in the presence of an external electric field: Field effect transistors
| Autor: | Xiao, Meixia, Yin, Xuwen, Song, Haiyang, Lv, Ying, Xiao, Beibei |
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| Zdroj: | In Physica B: Condensed Matter 1 June 2024 682 |
| Databáze: | ScienceDirect |
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