Improving structural and electrical properties of p-type Al–N-doped SnO2 films with low Al content by tuning N2 concentration in sputtering gas mixture

Autor: Dan, Ho Kim, Dang, Huu Phuc, Quach, Uy Lap, Le, Tran
Zdroj: In Physica B: Condensed Matter 1 February 2023 650
Databáze: ScienceDirect