Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition

Autor: Seredin, P.V., Terekhov, V.A., Barkov, K.A., Arsentyev, I.N., Bondarev, A.D.
Zdroj: In Physica B: Physics of Condensed Matter 15 June 2019 563:62-71
Databáze: ScienceDirect