Characterisation of Cs ion implanted GaN by DLTS

Autor: Ngoepe, P.N.M., Meyer, W.E., Auret, F.D., Omotoso, E., Hlatshwayo, T.T., Diale, M.
Zdroj: In Physica B: Physics of Condensed Matter 15 April 2018 535:96-98
Databáze: ScienceDirect