Rapid thermal annealing and modulation-doping effects on InAs/GaAs quantum dots photoluminescence dependence on excitation power

Autor: Chaâbani, W., Melliti, A., Maaref, M.A., Testelin, C., Lemaître, A.
Zdroj: In Physica B: Physics of Condensed Matter 15 July 2016 493:53-57
Databáze: ScienceDirect