Identification of intrinsic deep level defects responsible for electret behavior in TlGaSe2 layered semiconductor

Autor: Seyidov, MirHasan Yu., Mikailzade, Faik A., Uzun, Talip, Odrinsky, Andrei P., Yakar, Emin, Aliyeva, Vafa B., Babayev, Sardar S., Mammadov, Tofig G.
Zdroj: In Physica B: Physics of Condensed Matter 15 February 2016 483:82-89
Databáze: ScienceDirect