Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors
| Autor: | Saadaoui, Salah, Salem, Mohamed Mongi Ben, Fathallah, Olfa, Gassoumi, Malek, Gaquière, Christophe, Maaref, Hassen |
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| Zdroj: | In Physica B: Physics of Condensed Matter 1 March 2013 412:126-129 |
| Databáze: | ScienceDirect |
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