Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
| Autor: | Asghar, M., Iqbal, F., Faraz, S., Jokubavicius, V., Wahab, Q., Syväjärvi, M. |
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| Zdroj: | In Physica B: Physics of Condensed Matter 1 August 2012 407(15):3041-3043 |
| Databáze: | ScienceDirect |
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