Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

Autor: Gaubas, E., Uleckas, A., Rafi, J.M., Chen, J., Yang, D., Vanhellemont, J.
Zdroj: In Physica B: Physics of Condensed Matter 1 August 2012 407(15):2998-3001
Databáze: ScienceDirect