300 mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation

Autor: Kissinger, G., Raming, G., Wahlich, R., Müller, T.
Zdroj: In Physica B: Physics of Condensed Matter 1 August 2012 407(15):2993-2997
Databáze: ScienceDirect