Double carriers pulse DLTS for the characterization of electron–hole recombination process in GaAsN grown by chemical beam epitaxy
| Autor: | Bouzazi, Boussairi, Suzuki, Hidetoshi, Kojima, Nobuaki, Ohshita, Yoshio, Yamaguchi, Masafumi |
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| Zdroj: | In Physica B: Physics of Condensed Matter 2011 406(5):1070-1075 |
| Databáze: | ScienceDirect |
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