Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
| Autor: | Kropman, D., Mellikov, E., Öpik, A., Lott, K., Volobueva, O., Kärner, T., Heinmaa, I., Laas, T., Medvid, A. |
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| Zdroj: | In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):5153-5155 |
| Databáze: | ScienceDirect |
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