Low temperature transport spectroscopy of defects using Schottky-barrier MOSFETs

Autor: Calvet, L.E., Meshkov, G.A., Strupiechonski, E., Toubestani, D., Snyder, J.P., Fortuna, F., Wernsdorfer, W.
Zdroj: In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):5136-5139
Databáze: ScienceDirect