Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion
| Autor: | Arutyunov, N.Yu., Emtsev, V.V. |
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| Zdroj: | In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):5128-5131 |
| Databáze: | ScienceDirect |
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