Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors

Autor: Ahn, Cheol Hyoun, Seo, Dong Kyu, Woo, Chang Ho, Cho, Hyung Koun
Zdroj: In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):4835-4838
Databáze: ScienceDirect