Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors
Autor: | Ahn, Cheol Hyoun, Seo, Dong Kyu, Woo, Chang Ho, Cho, Hyung Koun |
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Zdroj: | In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):4835-4838 |
Databáze: | ScienceDirect |
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