Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation
| Autor: | Kozlovski, V.V., Emtsev, V.V., Ivanov, A.M., Lebedev, A.A., Oganesyan, G.A., Poloskin, D.S., Strokan, N.B. |
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| Zdroj: | In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):4752-4754 |
| Databáze: | ScienceDirect |
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