Raman characterization of hydrogen ion implanted silicon: “High-dose effect”?
| Autor: | Ovsyannikov, Sergey V., Shchennikov, Vsevolod V., Jr, Shchennikov, Vladimir V., Ponosov, Yuri S., Antonova, Irina V., Smirnov, Sergey V. |
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| Zdroj: | In Physica B: Physics of Condensed Matter 2008 403(19):3424-3428 |
| Databáze: | ScienceDirect |
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