Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment
| Autor: | Yamashita, Yoshifumi ⁎, Sakamoto, Yoshifumi, Kamiura, Yoichi, Ishiyama, Takeshi |
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| Zdroj: | In Physica B: Physics of Condensed Matter 2007 401:218-221 |
| Databáze: | ScienceDirect |
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