Influence of GaN polarity and intermediate-temperature buffer layers on strain relaxation and defects
| Autor: | Peng, C.X., Weng, H.M., Zhu, C.F., Ye, B.J., Zhou, X.Y., Han, R.D., Fong, W.K., Surya, C. |
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| Zdroj: | In Physica B: Physics of Condensed Matter 2007 391(1):6-11 |
| Databáze: | ScienceDirect |
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