A model for the formation of lattice defects at silicon oxide precipitates in silicon
| Autor: | Vanhellemont, J. *, De Gryse, O., Clauws, P. |
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| Zdroj: | In Physica B: Physics of Condensed Matter 31 December 2003 340-342:1056-1060 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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