Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

Autor: Altukhov, I.V., Chirkova, E.G., Sinis, V.P., Kagan, M.S. *, Troeger, R.T., Ray, S.K., Kolodzey, J., Prokofiev, A.A., Odnoblyudov, M.A., Yassievich, I.N.
Zdroj: In Physica B: Physics of Condensed Matter 31 December 2003 340-342:831-834
Databáze: ScienceDirect