Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures
Autor: | Altukhov, I.V., Chirkova, E.G., Sinis, V.P., Kagan, M.S. *, Troeger, R.T., Ray, S.K., Kolodzey, J., Prokofiev, A.A., Odnoblyudov, M.A., Yassievich, I.N. |
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Zdroj: | In Physica B: Physics of Condensed Matter 31 December 2003 340-342:831-834 |
Databáze: | ScienceDirect |
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