Defect states in transmutation-doped γ-irradiated Cz-Si crystals under high uniaxial pressure

Autor:	Budzulyak, S.I., Dotsenko, Yu.P., Ermakov, V.M., Kolomoets, V.V. *, Korbutyak, D.V., Venger, E.F., Fukuzawa, M., Yamada, M., Liarokapis, E.
Zdroj:	In Physica B: Physics of Condensed Matter 2001 302:12-16
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect