Fermi level pinning, capacitance hysteresis, tunnel effect, and deep level in AlGaN/GaN high-electron-mobility transistor
| Autor: | Saadaoui, Salah, Fathallah, Olfa, Maaref, Hassen |
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| Zdroj: | In Superlattices and Microstructures August 2021 156 |
| Databáze: | ScienceDirect |
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