Effect of In0.70Ga0.30As quantum dot insertion in the middle cell of InyGa1-yP/InxGa1-xAs/Ge triple-junction for solar cells

Autor: Aissat, A., Nacer, S., Vilcot, J.P.
Zdroj: In Superlattices and Microstructures January 2021 149
Databáze: ScienceDirect