Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors
| Autor: | Chatterjee, Abhishek, Khamari, Shailesh K., Kumar, R., Porwal, S., Bose, A., Sharma, T.K. |
|---|---|
| Zdroj: | In Superlattices and Microstructures December 2020 148 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect