Fabrication and characterization of rare earth (Ce, Gd, and Y) doped ZrO2 based metal-insulator-semiconductor (MIS) type Schottky barrier diodes

Autor: Sasikumar, K., Bharathikannan, R., Raja, M., Mohanbabu, B.
Zdroj: In Superlattices and Microstructures March 2020 139
Databáze: ScienceDirect