2.1 μm InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers

Autor: Xie, Shengwen, Yang, Chengao, Huang, ShuShan, Yuan, Ye, Zhang, Yi, Shang, Jinming, Cai, Chenyuan, Zhang, Yu, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan
Zdroj: In Superlattices and Microstructures June 2019 130:339-345
Databáze: ScienceDirect