2.1 μm InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers
Autor: | Xie, Shengwen, Yang, Chengao, Huang, ShuShan, Yuan, Ye, Zhang, Yi, Shang, Jinming, Cai, Chenyuan, Zhang, Yu, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan |
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Zdroj: | In Superlattices and Microstructures June 2019 130:339-345 |
Databáze: | ScienceDirect |
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