Effect of P+ shielding region on single event burnout of 4H[sbnd]SiC trench gate MOSFET
| Autor: | Yan-juan, Liu, Ying, Wang, Cheng-hao, Yu, Xin, Luo, Fei, Cao |
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| Zdroj: | In Superlattices and Microstructures October 2018 122:165-170 |
| Databáze: | ScienceDirect |
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