Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via Si-doping design of quantum barriers

Autor: Lu, Lin, Wan, Zhi, Xu, FuJun, Wang, XinQiang, Lv, Chen, Jiang, Ming, Chen, QiGong
Zdroj: In Superlattices and Microstructures September 2017 109:687-692
Databáze: ScienceDirect