Mechanism on M (M[dbnd]Ni, Mo, Ni[sbnd]Mo) as deep level impurity reducing the TCR of Si-rich Cr[sbnd]Si resistive films
| Autor: | Wang, X.Y., Liu, Y.P., Ding, B.N., Li, M.X., Chen, T.N., Zhu, X.T. |
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| Zdroj: | In Superlattices and Microstructures September 2017 109:217-228 |
| Databáze: | ScienceDirect |
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