Combined MEIS/TEM study of structural defects in Si implanted with a high dose of 100 keV Si ions

Autor: Sobolev, N.A., Sakharov, V.I., Serenkov, I.T., Vdovin, V.I.
Zdroj: In Superlattices and Microstructures 2009 45(4):177-181
Databáze: ScienceDirect