Combined MEIS/TEM study of structural defects in Si implanted with a high dose of 100 keV Si ions
Autor: | Sobolev, N.A., Sakharov, V.I., Serenkov, I.T., Vdovin, V.I. |
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Zdroj: | In Superlattices and Microstructures 2009 45(4):177-181 |
Databáze: | ScienceDirect |
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