Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective
| Autor: | Müller, St.G., Brady, M.F., Burk, A.A., Hobgood, H.McD., Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, A.R., Sumakeris, J.J., Tsvetkov, V.F., Carter, C.H., Jr. |
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| Zdroj: | In Superlattices and Microstructures 2006 40(4):195-200 |
| Databáze: | ScienceDirect |
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