Radiation source dependence of device performance degradation for 4H-SiC MESFETs
| Autor: | Ohyama, H., Takakura, K., Uemura, K., Shigaki, K., Kudou, T., Matsumoto, T., Arai, M., Kuboyama, S., Kamezawa, C., Simoen, E., Claeys, C. |
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| Zdroj: | In Superlattices and Microstructures 2006 40(4):632-637 |
| Databáze: | ScienceDirect |
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