A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices
| Autor: | Ben Salah, Tarek, Garrab, Hatem, Ghedira, Sami, Allard, Bruno, Risaletto, Damien, Raynaud, Christophe, Besbes, Kamel, Morel, Hervé |
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| Zdroj: | In Superlattices and Microstructures 2006 40(4):580-587 |
| Databáze: | ScienceDirect |
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