Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC
| Autor: | Cordier, Y., Chenot, S., Laügt, M., Tottereau, O., Joblot, S., Semond, F., Massies, J., Di Cioccio, L., Moriceau, H. |
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| Zdroj: | In Superlattices and Microstructures 2006 40(4):359-362 |
| Databáze: | ScienceDirect |
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