On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier
Autor: | Di Benedetto, Luigi, Licciardo, Gian Domenico, Rubino, Alfredo |
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Zdroj: | In Mathematics and Computers in Simulation May 2021 183:198-207 |
Databáze: | ScienceDirect |
Externí odkaz: |