Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation

Autor: Cooper, David, Ailliot, Cyril, Barnes, Jean-Paul, Hartmann, Jean-Michel, Salles, Phillipe, Benassayag, Gerard, Dunin-Borkowski, Rafal E.
Zdroj: In Ultramicroscopy 2010 110(5):383-389
Databáze: ScienceDirect