Dopant distributions in n-MOSFET structure observed by atom probe tomography
| Autor: | Inoue, K., Yano, F., Nishida, A., Takamizawa, H., Tsunomura, T., Nagai, Y., Hasegawa, M. |
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| Zdroj: | In Ultramicroscopy November 2009 109(12):1479-1484 |
| Databáze: | ScienceDirect |
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