Study of strained-silicon channel metal–oxide–semiconductor field effect transistors by large angle convergent-beam electron diffraction
| Autor: | Liu, H.H., Duan, X.F., Xu, Qiuxia, Liu, Bang-Gui |
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| Zdroj: | In Ultramicroscopy 2008 108(9):816-820 |
| Databáze: | ScienceDirect |
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