Single-Layer InGeS: Robust direct Bandgap, super high electron Mobility, long-lived Carriers, and Ohmic contact for Next-Generation Field-Effect transistors

Autor:	Cheng, Jie, Zhang, Chao, Bao, Jia-Yu, Yuan, Wen-Bo, Xie, Yong-Sheng, Long, Zhi, Song, Wen-Hao, Lei, Guo-Ping, Yang, Chun-Ming, Wei, Yong, Wang, Shi-Fa, Hu, Lei
Zdroj:	In Chemical Physics 1 October 2024 586
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect